Plasma diagnosis with Langmuir probe in the process of vacuum arcdeposition
Zhong-Yuan Cheng
Ji-Yan Zou
Lei Yang
Dept. of Electr. Eng., Huazhong Univ. of Sci. & Technol., Hubei;
Abstract
This paper introduces some efforts to use the Langmuir probe as an
in situ diagnostic tool in the process of VAD (vacuum arc deposition),
i.e., to minimize the contamination on the probe and to discuss the
validity of the probe theories. The characteristic curves are dealt with
by Langmuir's thick-sheath model, and the plasma parameters (electron
temperature kTe and electron density n0) are
calculated from the combination of the Ie2~V
curves and LnIe~V curves. Plasma diagnoses are performed in
the process of TiN film deposition, with different partial pressures of
nitrogen, arc current and distances from the cathode. Nonelastic
collisions in the VAD plasma are evaluated with the diagnostic results
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