Requirement for accurate interconnect temperature measurement for electromigration test

In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.