A 3.3 V high-density AND flash memory with 1 ms/512B erase and program time

A 3.3 V single-supply 32 Mb flash memory realizing a 512B per sector program/erase unit features serial sector read, sector program and sector erase modes. By using AND cells and connecting one sense and latch (SL) circuit to every data line (DL) pair, these modes can handle data strictly sector by sector (512B). The same sector size for both programming and erasing simplifies the rewrite operation to a small number of sectors and prevents system performance degradation. The chip is implemented in a 0.45 /spl mu/m triple-well CMOS process.