Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology

The total ionization dose effects and the single event effects in a 0.25 µm Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8×10
¹²
proton/cm
²
. The results indicate that this process is radiation tolerant.