Welcome to IEEE Xplore 2.0: Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Cart | Sitemap | Help

Abstract


	BROWSE	SEARCH	IEEE XPLORE GUIDE	SUPPORT

View TOC

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection
Black, J.D. Ball, D.R. Robinson, W.H. Fleetwood, D.M. Schrimpf, R.D. Reed, R.A. Black, D.A. Warren, K.M. Tipton, A.D. Dodd, P.E. Haddad, N.F. Xapsos, M.A. Kim, H.S. Friendlich, M.
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN;

This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Dec. 2008
Volume: 55, Issue: 6, Part 1
On page(s): 2943-2947
ISSN: 0018-9499
INSPEC Accession Number: 10467199
Digital Object Identifier: 10.1109/TNS.2008.2007231
Current Version Published: 2009-01-19

Abstract
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.

Index Terms
Available to subscribers and IEEE members.

References
Available to subscribers and IEEE members.

Citing Documents
Available to subscribers and IEEE members.

You are not logged in.

Guests may access Abstract records free of charge.