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A 60-GHz direct-conversion transmitter in 130-nm CMOS
Zhang, F. Yang, B. Wicks, B.N. Liu, Z. Ta, C.M. Mo, Y. Wang, K. Felic, G. Nadagouda, P. Walsh, T. Shieh, W. Mareels, I. Evans, R.J. Skafidas, E.
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC;

This paper appears in: Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Publication Date: 3-5 Nov. 2008
On page(s): 137-140
Location: Fukuoka,
ISBN: 978-1-4244-2604-1
INSPEC Accession Number: 10423594
Digital Object Identifier: 10.1109/ASSCC.2008.4708748
Current Version Published: 2008-12-12

Abstract
This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authorspsila knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering.

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