Synthesis and Properties of Templated Si-based Nanowires for Electrical Transport
Jae Ho Lee
Rogers, P.H.
Carpenter, M.A.
Eisenbraun, E.T.
Yongqiang Xue
Geer, R.E.
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY;
This paper appears in: Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Publication Date: 18-21 Aug. 2008
On page(s): 584-587
Location: Arlington, TX,
ISBN: 978-1-4244-2103-9
INSPEC Accession Number: 10203843
Digital Object Identifier: 10.1109/NANO.2008.173
Current Version Published: 2008-09-03
Abstract
Self-assembled Si nanowires (SiNWs) have been synthesized and characterized as a template for surface metal silicide formation to investigate electron transport at the nanowire surface. Silicon nanowires were directly grown on silicon substrates via the solid-liquid-solid (SLS) growth process. Preliminary synthesis utilized high-temperature processing of a sputtered Au catalyst film on Si (100) and (111) substrates in an oxygen-filtered Ar ambient. SiNW diameter was a roughly monotonic function of the growth time/temperature. The diameters of the SiNW templates ranged from approximately 5 nm to 180 nm. Ni deposition on the SLS SiNWs and post-deposition thermal processing was carried out for silicide formation. Metal-silicide coated nanowires were dispensed on metal-patterned Si wafers for electrical characterization and exhibited an improvement in conductivity of several orders of magnitude.
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