Field effect transistor as heterodyne terahertz detector
Gershgorin, B.
Kachorovskii, V.Yu.
Lvov, Y.V.
Shur, M.S.
Rensselaer Polytech. Inst., Troy, NY;
This paper appears in: Electronics Letters
Publication Date: Aug. 14 2008
Volume: 44,
Issue: 17
On page(s): 1036-1037
ISSN: 0013-5194
INSPEC Accession Number: 10157245
Digital Object Identifier: 10.1049/el:20080737
Current Version Published: 2008-08-22
Abstract
A theory of nonlinear response of the channel of a field effect transistor subjected to two terahertz beams (measured signal and local oscillator) with the close frequencies has been developed. It is shown that electric current flowing in the transistor channel drastically increases heterodyne efficiency. Also, it is demonstrated that such a heterodyne detector is capable of operating effectively with very high intermediate frequencies up to 10 divide100 GHz.
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