A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS
Arbabian, A.
Niknejad, A.M.
Dept. of Electr. Eng. & Comput. Sci., California, Univ., Berkeley, CA;
This paper appears in: Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Publication Date: June 17 2008-April 17 2008
On page(s): 57-60
Location: Atlanta, GA,
ISSN: 1529-2517
ISBN: 978-1-4244-1808-4
INSPEC Accession Number: 10103323
Digital Object Identifier: 10.1109/RFIC.2008.4561385
Current Version Published: 2008-07-15
Abstract
A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.
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