New approach in estimating the lifetime in NBT stressed P-channel power VDMOSFETs

A brief overview of NBT stress-induced threshold voltage instabilities in p-channel power vertical double- diffused MOS field-effect transistors (VDMOSFETs) is presented. New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs is proposed. The creation of lifetime surface for operating area, which can be useful for determination of device lifetime, operating temperature or operating bias, is demonstrated as well.