Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories

Characteristics of MFIS-type ferroelectric-gate FETs as a NAND flash memory cell are investigated. Lower voltage operations compared with floating-gate/MONOS NAND cells are realized. Excellent program and read disturb characteristics are presented. High endurance and long data retention results are also described. Due to the voltage-driven low-voltage and scalable properties, ferroelectric-gate FETs are most suitable for the sub- lOnm NAND flash memories.