Abstract
A fully monolithic oscillator achieved via MEMS-last integration of low temperature nickel micromechanical resonator arrays over finished foundry CMOS circuitry has been demonstrated with a measured phase noise of -95 dBc/Hz at a 10-kHz offset from its 10.92-MHz carrier (i.e., output) frequency. The use of a side-supported flexural-mode disk resonator-array to boost the power handling of the resonant tank is instrumental to allowing adequate oscillator performance despite the use of low-temperature nickel structural material. Because the fabrication steps for the resonator-array never exceed 50degC, the process is amenable to not only MEMS-last monolithic integration with the 0.35 mum CMOS of this work, but also next generation CMOS with gate lengths 65 nm and smaller that use advanced low-k dielectric material to lower interconnect capacitance.
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