Welcome to IEEE Xplore 2.0: Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

Cart | Sitemap | Help

Abstract


	BROWSE	SEARCH	IEEE XPLORE GUIDE	SUPPORT

View TOC

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies
Narasimham, B. Bhuva, B.L. Schrimpf, R.D. Massengill, L.W. Gadlage, M.J. Amusan, O.A. Holman, W.T. Witulski, A.F. Robinson, W.H. Black, J.D. Benedetto, J.M. Eaton, P.H.
Vanderbilt Univ., Nashville, TN;

This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Dec. 2007
Volume: 54, Issue: 6, Part 1
On page(s): 2506-2511
Location: Snowmass Village, CO, USA,
ISSN: 0018-9499
INSPEC Accession Number: 10062080
Digital Object Identifier: 10.1109/TNS.2007.910125
Current Version Published: 2007-12-12

Abstract
The distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS technologies are measured experimentally using an autonomous pulse characterization technique. The event cross section is the highest for SET pulses between 400 ps to 700 ps in the 130-nm process, while it is dominated by SET pulses in the range of 500 ps to 900 ps in the 90-nm process. The increasing probability of longer SET pulses with scaling is a key factor determining combinational logic soft errors in advanced technologies. Mixed mode 3D-TCAD simulations demonstrate that the variation of pulse-width results from the variation in strike location.

Index Terms
Available to subscribers and IEEE members.

References
Available to subscribers and IEEE members.

Citing Documents
Available to subscribers and IEEE members.

You are not logged in.

Guests may access Abstract records free of charge.