Strain Compensated InGaAs/GaAsP Single Quantum Well Thin Film Lasers Integrated onto Si Substrates
Sang-Yeon Cho
Palit, S.
Dapeng Xu
Tsvid, G.
Jokerst, N.
Mawst, L.
Kuech, T.
Duke Univ., Durham;
This paper appears in: Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Publication Date: 21-25 Oct. 2007
On page(s): 829-830
Location: Lake Buena Vista, FL,
ISSN: 1092-8081
ISBN: 978-1-4244-0925-9
INSPEC Accession Number: 9858651
Digital Object Identifier: 10.1109/LEOS.2007.4382664
Current Version Published: 2007-11-12
Abstract
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.
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