Millimeter-Wave Devices and Circuit Blocks up to 104 GHz in 90 nm CMOS
Heydari, B.
Bohsali, M.
Adabi, E.
Niknejad, A.M.
Univ. of California, Berkeley;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: Dec. 2007
Volume: 42,
Issue: 12
On page(s): 2893-2903
Location: Lille, France,
ISSN: 0018-9200
INSPEC Accession Number: 9856976
Digital Object Identifier: 10.1109/JSSC.2007.908743
Current Version Published: 2007-11-27
Abstract
A systematic methodology for layout optimization of active devices for millimeter-wave (mm-wave) application is proposed. A hybrid mm-wave modeling technique was developed to extend the validity of the device compact models up to 100 GHz. These methods resulted in the design of a customized 90 nm device layout which yields an extrapolated of 300 GHz from an intrinsic device . The device is incorporated into a low-power 60 GHz amplifier consuming 10.5 mW, providing 12.2 dB of gain, and an output of 4 dBm. An experimental three-stage 104 GHz tuned amplifier has a measured peak gain of 9.3 dB. Finally, a Colpitts oscillator operating at 104 GHz delivers up to 5 dBm of output power while consuming 6.5 mW.
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
