Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
Woo Young Choi
Byung-Gook Park
Jong Duk Lee
Tsu-Jae King Liu
California Univ., Berkeley;
This paper appears in: Electron Device Letters, IEEE
Publication Date: Aug. 2007
Volume: 28,
Issue: 8
On page(s): 743-745
ISSN: 0741-3106
INSPEC Accession Number: 9619922
Digital Object Identifier: 10.1109/LED.2007.901273
Current Version Published: 2007-07-23
Abstract
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, the ON/ OFF current ratio of the TFET was still lower than that of the MOSFET. In order to increase the on current further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel material
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