Internal Unilaterization Technique for CMOS mm-Wave Amplifiers
Heydari, B.
Adabi, E.
Bohsali, M.
Afshar, B.
Arbabian, A.
Niknejad, A.M.
UC Berkeley, Berkeley;
This paper appears in: Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Publication Date: 3-5 June 2007
On page(s): 463-466
Location: Honolulu, HI,
ISSN: 1529-2517
ISBN: 1-4244-0530-0
INSPEC Accession Number: 9809422
Digital Object Identifier: 10.1109/RFIC.2007.380924
Current Version Published: 2007-07-02
Abstract
An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.
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