Flexible RF/Microwave Switch-PIN Diodes Using Single-Crystal Si-Nanomembranes
Hao-Chih Yuan
Zhenqiang Ma
Celler, G.K.
Wisconsin Univ. Madison, Madison;
This paper appears in: Microwave Symposium, 2007. IEEE/MTT-S International
Publication Date: 3-8 June 2007
On page(s): 1027-1030
Location: Honolulu, HI,
ISSN: 0149-645X
ISBN: 1-4244-0688-9
INSPEC Accession Number: 9727678
Digital Object Identifier: 10.1109/MWSYM.2007.380232
Current Version Published: 2007-07-02
Abstract
We report, to the best of our knowledge, the first realization of flexible single-crystal Si PIN diodes that are monolithically integrated on low-cost, low-temperature, flexible plastic substrate. 200-nm thin Si (001) nanomembrane is deprived from silicon-on-insulator (SOI) substrate after selective n-and p-type doping on the designated regions. The detailed fabrication of Si-nanomembrane (SiNM) PIN diodes on plastic substrate is described. The flexible SiNM PIN diodes demonstrate typical rectifying characteristics. S-parameter measurements on these PIN diodes show an insertion loss of less than 1.7 dB with isolation higher than 20 dB from DC up to 5 GHz at low bias conditions.
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