Theory of Fermi Level Pinning of High-k Dielectrics
Shiraishi, K.
Takeuchi, H.
Akasaka, Y.
Watanabe, H.
Umezawa, N.
Chikyow, T.
Nara, Y.
Yamada, K.
Tsu-Jae King Liu
Graduate Sch. of Pure & Appl. Phys., Tsukuba Univ., Ibaraki;
Abstract
Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been systematically studied theoretically. Fermi-level pinning in high-work-function materials is governed by the O vacancy generation and subsequent formation of interface dipoles near gate electrodes due to the electron transfer. On the other hand, O interstitial formation plays a crucial role for Fermi-level pinning in low-work-function materials. From our theoretical considerations, we have found that the work-function pinning-free-region generally appears due the difference in the mechanism of Fermi-level pinning of high- and low-work-function materials. The widening of this work-function pinning-free-region is the key issue for the fundamental relaxation of Fermi-level pinning in high-k gate dielectric
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