High power COD-free operation of 0.98 μm InGaAs/GaAs/InGaPlasers with noninjection regions near the facets
Sagawa, M.
Hiramoto, K.
Toyonaka, T.
Shinoda, K.
Uomi, K.
Hitachi Ltd., Tokyo;
This paper appears in: Electronics Letters
Publication Date: 18 Aug 1994
Volume: 30,
Issue: 17
On page(s): 1410-1411
ISSN: 0013-5194
References Cited: 6
CODEN: ELLEAK
INSPEC Accession Number: 4766836
Current Version Published: 2002-08-06
Abstract
The authors demonstrate the catastrophic-optical-damage-free
high-output-power operation of 0.98 μm InGaAs/InGaP/GaAs
buried-ridge-structure lasers with non-injection regions near the
facets. A maximum output power of 466 mW and fundamental operation at
100 mW were achieved
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