A time dependent hydrodynamic device simulator SNU-2D with newdiscretization scheme and algorithm
Woo-Sung Choi
Jae-Gyung Ahn
Young-June Park
Hong-Shick Min
Chang-Gyu Hwang
Dept. of Electron. Eng., Seoul Nat. Univ.;
Abstract
A two-dimensional device simulator SNU-2D based on the
hydrodynamic model is developed for the simulation and analysis of
submicron devices. The simulator has the capacity for both
self-consistent steady-state and transient-state simulation. To obtain
better convergence and numerical stability, we adopt an improved
discretization scheme for the carrier energy flux equation and a new
strategy for the transient simulation. In steady-state simulation the
new discretization scheme shows a considerable improvement in
convergence rate and numerical accuracy compared with the existing
schemes. A transient simulation study is carried out on a deep submicron
n-MOSFET used in the sense amplifier of SRAM cells to investigate the
gate-switching characteristic. It is found that the behavior of carrier
temperature is quasi-static during the switching time even for very fast
switching speed, while the behavior of impact ionization under transient
mode deviates from that under dc mode as the switching speed increases
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