Defect Passivation in Poly-Si TFTs by Ion Implantation and Pulsed Laser Annealing
Good, D.
Wickboldt, P.
Tsu-Jae King Liu
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA;
This paper appears in: Electron Device Letters, IEEE
Publication Date: Oct. 2006
Volume: 27,
Issue: 10
On page(s): 840-842
ISSN: 0741-3106
INSPEC Accession Number: 9116766
Digital Object Identifier: 10.1109/LED.2006.883089
Current Version Published: 2006-09-25
Abstract
Improvement in the performance of excimer laser annealed (ELA) poly-Si thin-film transistors was seen through ion implantation of N, O, or F prior to the ELA step. Devices passivated in this way show steeper subthreshold swings, higher carrier mobilities, and lower off current than unpassivated or hydrogen-passivated devices, even in a low thermal budget process. With the addition of a higher temperature anneal, the N passivated devices are superior both in terms of performance and reliability
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