Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs

Surface preparation has a significant effect on the drain current-gate voltage characteristics of mercury-probe pseudo MOSFETs. Surface preparation by dilute hydrofluoric acid (HF) rinse manifests itself in two ways: it changes the barrier height of the Hg/Si Schottky barrier and it induces charge on the Si-film surface. Consequently, the electron drain current decreases with time after the HF rinse and the hole current increases. The surface charge also influences the extraction of the interface-trap density at the Si/buried oxide interface.