A MEMS resonant strain sensor with 33 nano-strain resolution in a 10 kHz bandwidth
Wojciechowski, K.E.
Boser, B.E.
Pisano, A.P.
Dept. of Electr. Eng., California Univ., Berkeley, CA;
This paper appears in: Sensors, 2005 IEEE
Publication Date: Oct. 30 2005-Nov. 3 2005
On page(s): 4 pp.-
Location: Irvine, CA,
ISBN: 0-7803-9056-3
INSPEC Accession Number: 8913958
Digital Object Identifier: 10.1109/ICSENS.2005.1597857
Current Version Published: 2006-03-13
Abstract
In this paper the authors demonstrate a high performance strain measurement system that consists of a polysilicon double ended tuning fork (DETF) resonant sensor and surface mount electronics to measure its output. This system achieves a resolution of 33 nano-strain (nepsiv) in a bandwidth of 10 kHz, and has a noise floor of 60 pico-strain per root hertz (pepsiv/radicHz) up to 1kHz. The 60 pepsiv/radicHz noise floor is equivalent to a displacement resolution of 12 femto-meters per root hertz (fm/radicHz). To the best of the author's knowledge the smallest reported displacement resolution using surface micromachining is 16 fm/radicHz (Geen et al., 2002)
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