Home  |   Login  |   Logout  |   Access Information  |   Alerts  |   Purchase History  |   Cart  |   Sitemap  |   Help   
 
Abstract
BROWSE SEARCH IEEE XPLORE GUIDE SUPPORT
arrow_leftView TOC
Email/Printer Friendly Format  
 

High-Q UHF micromechanical radial-contour mode disk resonators
Clark, J.R.   Hsu, W.-T.   Abdelmoneum, M.A.   Nguyen, C.T.-C.  
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA;

This paper appears in: Microelectromechanical Systems, Journal of
Publication Date: Dec. 2005
Volume: 14,  Issue: 6
On page(s): 1298- 1310
ISSN: 1057-7157
INSPEC Accession Number: 8678671
Digital Object Identifier: 10.1109/JMEMS.2005.856675
Current Version Published: 2005-12-05

Abstract
A micromechanical, laterally vibrating disk resonator, fabricated via a technology combining polysilicon surface-micromachining and metal electroplating to attain submicron lateral capacitive gaps, has been demonstrated at frequencies as high as 829 MHz and with Q's as high as 23 000 at 193 MHz. Furthermore, the resonators have been demonstrated operating in the first three radial contour modes, allowing a significant frequency increase without scaling the device, and a 193 MHz resonator has been shown operating at atmospheric pressure with a Q of 8,880, evidence that vacuum packaging is not necessary for many applications. These results represent an important step toward reaching the frequencies required by the RF front-ends in wireless transceivers. The geometric dimensions necessary to reach a given frequency are larger for this contour-mode than for the flexural-modes used by previous resonators. This, coupled with its unprecedented Q value, makes this disk resonator a choice candidate for use in the IF and RF stages of future miniaturized transceivers. Finally, a number of measurement techniques are demonstrated, including two electromechanical mixing techniques, and evaluated for their ability to measure the performance of sub-optimal (e.g., insufficiently small capacitive gap, limited dc-bias), high-frequency, high-Q micromechanical resonators under conditions where parasitic effects could otherwise mask motional output currents. [1051].

Index Terms
Available to subscribers and IEEE members.

References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
You are not logged in.
Guests may access Abstract records free of charge.
Login
Username
Password
» Forgot your password?
Please remember to log out when you have finished your session.
You must log in to access:
• Advanced or Author Search
• CrossRef Search
• AbstractPlus Records
• Full Text PDF
• Full Text HTML
Access this document
Full Text: PDF (3952 KB)
» Buy this document now
»  Learn more about
»  Learn more about
    purchasing articles
    and standards

Rights and Permissions
» Learn More
Download this citation
Available to subscribers and IEEE members.
 
arrow_leftView TOC   |  Back to toparrow_up
Indexed by IEE Inspec
© Copyright 2009 IEEE – All Rights Reserved