Abstract
A fully-integrated, 64-element, pyroelectric infrared-detector array, fabricated on a thin-membrane structure by combining ZnO thin-film deposition technology, NMOS planar processing, and anisotropic backside etching of silicon is described. Incident thermal radiation on individual detector elements is sensed by the temperature change in a structure composed of a ZnO pyroelectric capacitor encapsulated in silicon dioxide and supported by a 25 µm-thick silicon membrane. Thai measured black-body responsivity at temperature T=300 K and frequency f=24 Hz is 4.3 × 104VW-1with a corresponding measured detectivity D*=3.1 × 107cm √ HzW-1.
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