SnO2/n-Si solar cell

Low cost and low production energy SnO
2
/n-Si solar cells with conversion efficiency of 15.4% (at best) (66mW/cm
²
, AMl spectrum) were obtained by low temperature CVD of SnO
2
using SnCl
4
, H
2
O and SbCl
5
as source meterial. The maximum processing temperature of the CVD was 350°C. This low temperature CVD processing makes continuous volume production of the cells far easier than conventional technologies. Stability of the cell was studied under various ambient condition and a stable cell/module structure was developed. Dependence of cell characteristics on the processing conditions and stability data of the fabricated cells are reported.