Design of radio frequency metal-insulator-metal (MIM) capacitors

RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and quality factor, Q, of integrated capacitors. We present measured data showing how the quality factor is improved when the number of vias is increased.