A 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier

To the authors' knowledge, the first 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier (TIA) is presented here. It has been realized in a 0.35 /spl mu/m SiGe process and its area is 0.45mm/sup 2/ with pads. Employing inductive series and shunt peaking techniques, the proposed TIA can achieve a transimpedance gain of 61.6dB/spl Omega/ and the bandwidth of 7.4GHz, while dissipating only 18mW with 1.2V supply. With an equivalent photodiode capacitance of 0.15pF, this TIA shows the input referred noise current density of 22pA//spl radic/Hz.