Effect of reverse measurement on the HC instability evaluation of MOSFETs

Anomalous hot-carrier (HC) degradation is found in some products attributable to the reverse device measurement. Disproportionately great reverse degradation is found the core problem. Assuming that the HC degradation is a power function of time, the anomalous degradation is theoretically characterized using the parameters of HC degradation. It is confirmed that the time-dependence slope in the reverse direction and voltage dependence factor are important parameters.