A 40-GHz frequency divider in 0.18-μm CMOS technology
Lee, J.
Razavi, B.
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: April 2004
Volume: 39,
Issue: 4
On page(s): 594- 601
ISSN: 0018-9200
INSPEC Accession Number: 7957708
Digital Object Identifier: 10.1109/JSSC.2004.825119
Current Version Published: 2004-03-30
Abstract
An analysis of regenerative dividers predicts the required phase shift or selectivity for proper operation. A divider topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances. Configured as two cascaded ÷2 stages, the circuit achieves a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.
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