Implementation of temperature dependent contact resistance model for the analysis of deep submicron devices under ESD
Jung-Hoon Chun
Yang Liu
Duvvury, C.
Dutton, R.W.
Center for Integrated Syst., Stanford Univ., CA, USA;
This paper appears in: Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Publication Date: 8-10 Dec. 2003
On page(s): 21.2.1- 21.2.4
ISSN:
ISBN: 0-7803-7872-5
INSPEC Accession Number: 7862301
Digital Object Identifier: 10.1109/IEDM.2003.1269333
Current Version Published: 2004-03-03
Abstract
The specific contact resistance (ρc) at the metal/semiconductor interface is known to be a monotonically decreasing function of temperature. Therefore the temperature dependence of ρc has significant implications for the reliable electrothermal behavior of deep submicron devices under high current and high temperature conditions. In this work, the effect of contact resistance on the performance of ESD protection devices has been investigated by device simulation and experiment with test structures in a 0.13 μm silicided CMOS process. A temperature-dependent model for ρc was implemented in a device simulator; results based on the new model are presented in comparison with results of a self-consistent Schottky diode model which unifies thermionic emission and tunneling effects.
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