Assessment of Ge n-MOSFETs by quantum simulation
Rahman, A.
Ghosh, A.
Lundstrom, M.
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA;
This paper appears in: Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Publication Date: 8-10 Dec. 2003
On page(s): 19.4.1- 19.4.4
ISSN:
ISBN: 0-7803-7872-5
INSPEC Accession Number: 7855092
Digital Object Identifier: 10.1109/IEDM.2003.1269324
Current Version Published: 2004-03-03
Abstract
Quantum simulations of ultra-thin-body (UTB), double-gate (DG), end of the ITRS-2001 roadmap germanium n-MOSFETs are performed using the non-equilibrium Green's function (NEGF) formalism. Ballistic simulations show that Ge (111) n-MOSFETs suffer from high source-to-drain tunneling in the off-state and low semiconductor capacitance in the on-state. However, devices fabricated on Ge (100) wafers perform better compared to their silicon counterparts. Design optimization studies show that a stiff tolerance for body thickness variations and a super-steep source-drain doping gradient are necessary to optimize the device performance. Finally, it was observed from quantum scattering simulations that the source-drain series resistance limits the otherwise near-ballistic intrinsic device operation.
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