Reliability characteristics of 200 GHz f/sub T//285 GHz f/sub MAX/ SiGe HBTs

The reliability characteristics of SiGe HBTs with 200 GHz f/sub T/ and 285 GHz f/sub MAX/ are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and V/sub CB/. The model predicts acceptable lifetime degradation with operation up to 1.5-2/spl times/BV/sub CEO/. We also present, for the first time, detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.