A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-μm CMOS
Cassan, D.J.
Long, J.R.
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: Mar 2003
Volume: 38,
Issue: 3
On page(s): 427- 435
ISSN: 0018-9200
INSPEC Accession Number: 7550724
Digital Object Identifier: 10.1109/JSSC.2002.808284
Current Version Published: 2003-03-10
Abstract
A low-noise amplifier (LNA) uses low-loss monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor (FET). A differential implementation in 0.18-μm CMOS technology, designed for 5-GHz wireless local-area networks (LANs), achieves a measured power gain of 14.2 dB, noise figure (NF, 50 Ω) of 0.9 dB, and third-order input intercept point (IIP3) of +0.9 dBm at 5.75 GHz, while consuming 16 mW from a 1-V supply. The feedback design is benchmarked to a 5.75-GHz cascode LNA fabricated in the same technology that realizes 14.1-dB gain, 1.8-dB NF, and IIP3 of +4.2 dBm, while dissipating 21.6 mW at 1.8 V.
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