Two-dimensional numerical simulation of metal-semiconductor-metal photodetector structures
Debbar, N.
Coll. of Eng., King Saud Univ., Riyadh, Saudi Arabia;
Abstract
A two-dimensional simulation program, based on the drift-diffusion model, is developed. The program numerically solves the basic semiconductor equations. The model is applied to simulate the dark current voltage characteristics of a planar metal-semiconductor-metal photodetectors (MSM).
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