Simulating the modulation response of VCSELs: the effects ofdiffusion capacitance and spatial hole-burning
Liu, Y.
Ng, W.-C.
Oyafuso, F.
Klein, B.
Hess, K.
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL;
This paper appears in: Optoelectronics, IEE Proceedings -
Publication Date: Aug 2002
Volume: 149,
Issue: 4
On page(s): 182- 188
ISSN: 1350-2433
References Cited: 21
CODEN: IPOPE8
INSPEC Accession Number: 7421142
Digital Object Identifier: 10.1049/ip-opt:20020544
Current Version Published: 2002-12-10
Abstract
The comprehensive semiconductor laser simulator, Minilase, has
been extended to simulate the dynamic response of vertical cavity
surface emitting lasers (VCSLs). Unlike conventional rate equation
approaches, Minilase is capable of correctly modelling nonlinear gain
effects in the modulation response without the introduction of an
empirical gain suppression factor. Various oxide-confined single-mode
VCSEL structures are simulated with Minilase to examine the effects of
real-space carrier transport on the modulation response in both vertical
and lateral directions. It is demonstrated that a roll-off in the
dynamic response is closely associated with the diffusion capacitance
caused by vertical carrier leakage. By either grading the separate
confinement regions or reducing the thickness of the SCH cavity, the
vertical carrier leakage is shown to be greatly suppressed, and the
modulation response is significantly improved. Simulations also reveal
that the nonuniform HE II-like transverse optical intensity in the
quantum well results in an overdamping of the relaxation oscillation,
and this effect is greatly reduced by making the electrical aperture
smaller than the optical aperture. Finally, a comparison with
experimental results is presented and discussed
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