SPICE Modeling of Insulator-Metal Transition Devices with Hysteresis

A New SPICE model for insulator-metal transition (IMT) devices is presented in this paper. The combined influences of the electric field and Joule heating are considered, allowing a transition from the high-resistance monoclinic phase to the low-resistance metallic one. Hysteresis, observed in specific IMT materials such as vanadium dioxide, is effectively addressed. The model's accuracy was validated using experimental results and electro-thermal FVM simulations. It has been implemented in VHDL-AMS, ensuring its compatibility with SPICE simulators like Xpedition AMS and PartQuest Explore, which were employed in this research. The model characterizes three specific device states, heating, cooling, and equilibrium. Transition dynamics between these states are tied to historical temperature data, represented as the device's temperature time derivative. To our knowledge, this model is the first IMT compact model that addresses hysteresis and is the first VHDL-AMS for IMT devices. With this development, circuit designers are provided with tools to fully explore the potential of VO
2
and similar IMT devices to design and realize next-generation electrical circuits.