A thermal activation view of low voltage impact ionization inMOSFETs
Pin Su
Goto, K.
Sugii, T.
Chenming Hu
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA;
This paper appears in: Electron Device Letters, IEEE
Publication Date: Sep 2002
Volume: 23,
Issue: 9
On page(s): 550- 552
ISSN: 0741-3106
References Cited: 17
CODEN: EDLEDZ
INSPEC Accession Number: 7377279
Digital Object Identifier: 10.1109/LED.2002.802653
Current Version Published: 2002-11-07
Abstract
The authors present a thermal activation perspective for direct
assessment of the low voltage impact ionization in deep-submicrometer
MOSFETs. A comparison of the experimentally determined activation energy
and a simple theoretical model is used to demonstrate the underlying
mechanism responsible for impact ionization at low drain bias. The study
indicates that the main driving force of impact ionization changes from
the electric field to the lattice temperature with power-supply scaling
below 1.2 V. This transition of driving force results in a linear
relationship between log(ISUB/ID) and
VD at sub-bandgap drain bias, as predicted by the proposed
thermally-assisted impact ionization model
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