A comparison of wave-function penetration effects on gatecapacitance in deep submicron n- and p-MOSFETs
Haque, A.
Kauser, M.Z.
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Sep 2002
Volume: 49,
Issue: 9
On page(s): 1580- 1587
ISSN: 0018-9383
References Cited: 25
CODEN: IETDAI
INSPEC Accession Number: 7377092
Digital Object Identifier: 10.1109/TED.2002.802633
Current Version Published: 2002-11-07
Abstract
We have calculated the effects of wave function penetration into
the gate-oxide on the modeling of gate capacitance in deep submicron
p-MOSFETs on (100) silicon for the first time. These results are
compared to those of n-MOSFETs. Self-consistent calculations show that
contrary to the common belief, penetration effects are more pronounced
in p-MOS devices. The error in inversion capacitance due to neglect of
penetration effects has opposite dependence on substrate doping density
for n-MOS and p-MOS structures. Consequently, the error in gate
capacitance for an n-MOSFET in strong inversion is strongly dependent on
doping density, while that for a p-MOSFET essentially does not depend on
doping density. An explanation for this unusual result is also provided.
Although the error in gate capacitance is only a few percent, it will
have nontrivial effects on device parameter extraction from
capacitance-voltage (C-V) measurements
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