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Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes
Narasimham, B. Bhuva, B.L. Schrimpf, R.D. Massengill, L.W. Gadlage, M.J. Holman, T.W. Witulski, A.F. Robinson, W.H. Black, J.D. Benedetto, J.M. Eaton, P.H.
Vanderbilt Univ., Nashville, TN;

This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: June 2008
Volume: 55, Issue: 3, Part 3
On page(s): 1708-1713
Location: Snowmass Village, CO, USA,
ISSN: 0018-9499
INSPEC Accession Number: 10059005
Digital Object Identifier: 10.1109/TNS.2008.920260
Current Version Published: 2008-06-17

Abstract
Mixed mode TCAD simulations are used to show the effects of guard bands and high density well contacts in maintaining the well potential after a single event strike and thus reduce the width of long transients in a 130-nm CMOS process. Experimental verification of the effectiveness in mitigating long transients was achieved by measuring the distribution of SET pulse widths produced by heavy ions for circuits with isolated contacts and for circuits with guard bands combined with larger contacts in a 130-nm process using an autonomous characterization technique. Heavy-ion test results indicate that controlling the well potential by using guard bands, along with high density well contacts, helps eliminate of SETs longer than 1 ns.

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