High power 1100-nm InGaAs/GaAs quantum dot lasers

1100-nm InGaAs/(Al)GaAs quantum dots laser material was developed with relatively low In content of 28% and an appropriate laser design to allow for high power applications. In comparison to a InGaAs QD laser with similar design but higher In content of 60% the newly developed laser exhibits an improved internal quantum efficiency and temperature stability of the threshold current.