Design of ion-implanted MOSFET's with very small physical dimensions
Dennard, R.H.
Gaensslen, F.H.
Rideout, V.L.
Bassous, E.
LeBlanc, A.R.
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: Oct 1974
Volume: 9,
Issue: 5
On page(s): 256- 268
ISSN: 0018-9200
Current Version Published: 2003-01-06
Abstract
This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 μ. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 μ were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.
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