FOUP mini-environment contaminants analysis in semiconductor manufacturing

FOUP mini-environment in-line contaminants analysis is introduced into 55nm technology node product. It demonstrates that the inorganic ions /VOC contaminants of some processes cannot be resolved by FOUP N
₂
purge action only, special taking good care for critical layers to prevent the irretrievable yield loss is necessary. The performance of FOUP N
₂
purge at different kinds of module processes are monitored; according the information of contaminants analysis, it can help us to improve the preventing methodologies and recipe fine tune instruction of FOUP N
₂
purge process.