MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation

A physics-based compact transport and charge model for RF-GaN HEMTs has been developed, including device self-heating, non-linear access region behavior, noise, etc. The model is validated against measurements from device-level DC up to circuit-level. The model is implemented in Verilog-A that is a suitable base for circuit simulations.