Simulation of Electrical Characterization on Lateral Silicon-on-Insulator PIN Diode for Space Radiation Detector

This paper discusses on the performance of S OI pin diode radiation detector when compared to conventional bulk silicon pin diode radiation detector. Lateral S OI detector was virtually fabricated in SILVAC O ATHENA and its electrical characteristics was analyzed in SILVAC O ATLAS. It was found that S OI pin diode produced lower leakage current value with 1,10° A/μm
²
difference compared to bulk structure. However, the same S OI structure suffered from temperature variation with an increment of 1,102 A/μm
²
in current density after the temperature was varied from 27 °C to 80 °C.