InGaSb based n-MOSFET: Modeling and performance analysis

In this paper, InGaSb based n-MOSFET model is proposed under unstrained, and 0.7% and 1.7% compressive strained conditions. Using well known Silvacos's ATLAS device simulator the I
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, mobility, subthreshold swing and threshold voltage characteristics are simulated and analyzed. The performance of the strained structure is found to be better then the unstrained structure. It also found that the device performances have strong temperature dependent. The propose device structure shows highest drain current and highest mobility compared to recently published experimental results for InGaSb-based p-MOSFET.