High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

We demonstrate
$L_{g} = \hbox{100}\ \hbox{nm}$
high-speed enhancement-mode (E-mode) InAs quantum-well MOSFETs with outstanding high-frequency and logic performance. These devices feature a 3-nm
$\hbox{Al}_{2}\hbox{O}_{3}$
layer grown by atomic layer deposition. The MOSFETs with
$L_{g} = \hbox{100}\ \hbox{nm}$
exhibit
$V_{T} = \hbox{0.2}\ \hbox{V}$
(E-mode),
$R_{\rm ON} = \hbox{370}\ \Omega\cdot\mu\hbox{m}$
,
$S = \hbox{105}\ \hbox{mV/dec}$
,
${\rm DIBL} = \hbox{100}\ \hbox{mV/V}$
, and
$g_{{m}\_\max} = \hbox{1720}\ \mu\hbox{S}/\mu\hbox{m}$
at
$V_{\rm DS} = \hbox{0.5} \ \hbox{V}$
. They also have an excellent high-frequency response of
$f_{T} = \hbox{248}\ \hbox{GHz}$
and
$f_{\max} = \hbox{302}\ \hbox{GHz}$
at
$V_{\rm DS} = \hbox{0.5}\ \hbox{V}$
, the highest
$f_{T}$
and
$f_{ \max}$
in III–V MOSFETs ever reported.