A Technique to Extract High-$k$ IPD Stack-Layer Thicknesses From $C$– $V$ Measurements

We propose in this letter a simple technique based on
C
-
V
measurements which allows the estimating of the thicknesses of SiO
_x
and high-
k
layers of interpoly dielectric (IPD) stacks. We apply this technique to IPD Al
₂
O
₃
-based stacks for floating-gate memory applications, finding a good agreement with TEM measurements. In addition, simulation results are provided to demonstrate the correctness of the basic assumption of this technique.