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0.13μm 210GHz fT SiGe HBTs - expanding the horizons of SiGe BiCMOS

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16 Author(s)

This article consists of a collection of slides from the author's conference presentation. SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5μm. The key component is the SiGebase HBT whose performance (fT, fMAX) is improved to >200GHz in the 0.13μm generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed. See also digest page 180.

Published in:

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International  (Volume:2 )

Date of Conference:

7-7 Feb. 2002